980 nm HIGH POWER FP LD EPI-WAFER

The 980 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition(MOCVD) by Huaxing OPTO, with strained InGaAs quantum well as the active layer.

850nm VCSEL LD EPI-WAFER

The 850 nm vertical-cavity surface-emitting laser (VCSEL) epi-wafer, designed especially for the telecommunication/gesture recognition/3D imaging applications, is grown by metal-organic chemical vapor
deposition (MOCVD) by Huaxing OPTO, with GaAs/AlGaAs multiple quantum wells(MQWs) as the active layer.

1310 nm 2.5G FP LD EPI-WAFER

The 1310 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.

1310 nm 10G FP LD EPI-WAFER

The 1310 nm 10G Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially forthe high-speed fiber-optic communications,
is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple
quantum wells (MQWs) as the active layer.

1550 nm FPLD EPI-WAFER

The 1550 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,
with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.

980 nm HIGH POWER FP LD EPI-WAFER

The 980 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for the high-power characteristics, is grown by metal-organic chemical vapor deposition(MOCVD) by Huaxing OPTO, with strained InGaAs quantum well as the active layer.

850nm VCSEL LD EPI-WAFER

The 850 nm vertical-cavity surface-emitting laser (VCSEL) epi-wafer, designed especially for the telecommunication/gesture recognition/3D imaging applications, is grown by metal-organic chemical vapor
deposition (MOCVD) by Huaxing OPTO, with GaAs/AlGaAs multiple quantum wells(MQWs) as the active layer.

1310 nm 2.5G FP LD EPI-WAFER

The 1310 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.

1310 nm 10G FP LD EPI-WAFER

The 1310 nm 10G Fabry-Perot (FP) laser diode (LD) epi-wafer, designed especially forthe high-speed fiber-optic communications,
is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,with strained InAlGaAs or InGaAsP multiple
quantum wells (MQWs) as the active layer.

1550 nm FPLD EPI-WAFER

The 1550 nm Fabry-Perot (FP) laser diode(LD) epi-wafer, designed especially for thehigh-speed fiber-optic communications, is grown by metal-organic chemical vapor deposition (MOCVD) by Huaxing OPTO,
with strained InAlGaAs or InGaAsP multiple quantum wells (MQWs) as the active layer.