Superluminescent Diode (SLD)

Superluminescent Diodes (SLDs /SLEDs) are optoelectronic semiconductor devices that emit broadband optical radiation based on superluminescence. In terms of construction, they are similar to laser diodes, containing an electrically driven p–n junction and an optical waveguide, but SLD intentionally lack optical feedback, so that no laser action can occur.

Semiconductor Optical Amplifiers (SOAs)

Semiconductor Optical Amplifier (SOA) is essentially a laser diode (LD) with no feedback from its input and output ports and hence is also referred to as a Traveling-Wave Amplifier (TWA). Semiconductor optical amplifiers (SOAs) have proven to be versatile and multifunctional devices that are key building blocks for optical networks.

DFB Laser

Distributed Feedback Laser (DFB Laser) is an edge-emitting semiconductor light source. Compared to FP Lasers and DBR Lasers, DFB Lasers are much more stable and generate a clean single mode output. This is achieved by the inclusion of a diffraction grating along the active region of the chip.

Superluminescent Diode (SLD)

Superluminescent Diodes (SLDs /SLEDs) are optoelectronic semiconductor devices that emit broadband optical radiation based on superluminescence. In terms of construction, they are similar to laser diodes, containing an electrically driven p–n junction and an optical waveguide, but SLD intentionally lack optical feedback, so that no laser action can occur.

Semiconductor Optical Amplifiers (SOAs)

Semiconductor Optical Amplifier (SOA) is essentially a laser diode (LD) with no feedback from its input and output ports and hence is also referred to as a Traveling-Wave Amplifier (TWA). Semiconductor optical amplifiers (SOAs) have proven to be versatile and multifunctional devices that are key building blocks for optical networks.

DFB Laser

Distributed Feedback Laser (DFB Laser) is an edge-emitting semiconductor light source. Compared to FP Lasers and DBR Lasers, DFB Lasers are much more stable and generate a clean single mode output. This is achieved by the inclusion of a diffraction grating along the active region of the chip.